The reverse anneal of junction characteristics in forming shallow p/sup +/-n junction by BF/sub 2//sup +/ implantation into thin Co films on Si substrate

Author

Juang, M.H. ; Cheng, Huang C.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

13

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

220

Lastpage

222

Abstract

Silicided shallow p/sup +/-n junctions, formed by BF/sub 2//sup +/ implantation into thin Co films on Si substrates and subsequently annealed, showed a reverse anneal of junction characteristics in the temperature range between 550 and 600 degrees C. The reverse anneal means behavior showing degradation of the considered parameters with increasing annealing temperature. A higher implant dosage caused a more distinct reverse anneal. The reverse anneal of electrical characteristics was associated with the reverse anneal of substitutional boron. A shallow p/sup +/-n junction with a leakage current density lower than 3 nA/cm/sub 2/, a forward ideality factor of better than 1.01, and a junction depth of about 0.1 mu m was achieved by just a 550 degrees C anneal.<>

Keywords

annealing; chemical interdiffusion; ion implantation; leakage currents; p-n homojunctions; 550 to 600 degC; Si substrate; Si-Co:BF/sub 2//sup +/; annealing temperature; drive in silicidation; forward ideality factor; implant dosage; ion implantation; junction characteristics; junction depth; leakage current density; reverse anneal; shallow p/sup +/-n junction; silicided junctions; Annealing; Boron; Degradation; Implants; Leakage current; Semiconductor films; Silicides; Substrates; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145027

Filename

145027