Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors

Author

Dattoli, Eric N. ; Kim, Kuk-Hwan ; Fung, Wayne Y. ; Choi, Seok-Youl ; Lu, Wei

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI

Volume

30

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

730

Lastpage

732

Abstract

In this letter, radio-frequency characterization of fully transparent thin-film transistors (TFTs) based on chemically synthesized nanowires (NWs) has been carried out. The NW TFTs show current-gain cutoff frequency f _T of 109 MHz and power-gain cutoff frequency f _max of 286 MHz. The TFTs were fabricated on glass substrates using aligned SnO₂ NWs as the transistor channel and sputtered indium-tin-oxide films as the source-drain and gate electrodes. Besides exhibiting > 100-MHz operation frequencies, the transparent NW TFTs show a narrow distribution of performance metrics among different devices. These results suggest the NW-TFT approach may be promising for high-speed transparent and flexible integrated circuits fabricated on diverse substrates.

Keywords

nanoelectronics; nanofabrication; nanowires; semiconductor device models; semiconductor thin films; thin film transistors; tin compounds; NW-TFT fabrication; SnO₂; chemically synthesized nanowire; frequency 109 MHz; frequency 286 MHz; glass substrate; radio-frequency operation; source-drain electrode; transistor channel; transparent nanowire thin-film transistor; Nanowire (NW); semiconductor materials; thin-film transistor (TFT); transparent devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2021167

Filename

4982677