Title :
GaAs Schottky diodes with near-ideal characteristics
Author :
Irvin, J.C. ; Sze, Simon M.
fDate :
7/1/1971 12:00:00 AM
Abstract :
The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown. The breakdown voltage and its temperature dependence are close to calculated values for one-sided abrupt junctions.
Keywords :
Avalanche breakdown; Capacitance; Electrodes; Gallium arsenide; Schottky barriers; Schottky diodes; Semiconductor diodes; Shape; Substrates; Temperature dependence;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8344
