Title :
Electron-relaxation effects in transferred-electron devices revealed by new simulation method
Author :
Jones, David ; Rees, H.D.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
A simulation method which efficiently solves the complete Boltzmann transport equation has been used to analyse transferred-electron oscillators. Four hitherto unrecognised relaxation effects have been identified, which are of major significance in characterising modes of operation.
Keywords :
Gunn oscillators; relaxation oscillators; simulation; Boltzmann transport equations; electron relaxation effect identification; operation mode characterization; simulation method; transferred electron oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720265
