DocumentCode
918526
Title
Electron-relaxation effects in transferred-electron devices revealed by new simulation method
Author
Jones, David ; Rees, H.D.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
8
Issue
14
fYear
1972
Firstpage
363
Lastpage
364
Abstract
A simulation method which efficiently solves the complete Boltzmann transport equation has been used to analyse transferred-electron oscillators. Four hitherto unrecognised relaxation effects have been identified, which are of major significance in characterising modes of operation.
Keywords
Gunn oscillators; relaxation oscillators; simulation; Boltzmann transport equations; electron relaxation effect identification; operation mode characterization; simulation method; transferred electron oscillators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720265
Filename
4235721
Link To Document