• DocumentCode
    918623
  • Title

    Simulation of Pt-n-p+ silicon punchthrough device

  • Author

    Stewart, J.A.C. ; Wakefield, J.

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
  • Volume
    8
  • Issue
    15
  • fYear
    1972
  • Firstpage
    378
  • Lastpage
    379
  • Abstract
    The small-signal impedance of a Pt-n-p+ device has been computed using a model which describes in detail the physical mechanisms in the depleted n region. The small-signal negative resistance is shown to be both frequency- and temperature-dependent at a given bias-current density.
  • Keywords
    electrical impedance; microwave devices; negative resistance effects; semiconductor device models; simulation; Pt-n-p silicon structure; microwave device; negative resistance effects; punchthrough injection device; semiconductor device models; simulation; small signal impedance analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720276
  • Filename
    4235733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=918623