• DocumentCode
    918668
  • Title

    Microwave transistors: Theory and design

  • Author

    Cooke, Harry F.

  • Author_Institution
    Avantek, Incorporated, Santa Clara, Calif.
  • Volume
    59
  • Issue
    8
  • fYear
    1971
  • Firstpage
    1163
  • Lastpage
    1181
  • Abstract
    Microwave transistors are useful as small-signal amplifiers to 6 GHz and power amplifiers to 4 GHz. Nearly all microwave transistors are of the silicon planar type. Power transistors use three types of geometries--interdigitated, overlay, and mesh--while small-signal transistors use interdigitated only. The general theory of the frequency response of transistors is reviewed, including active and inactive elements. A condensed description of the design and processing steps for a silicon microwave transistor is given. A final section deals with the types of high-frequency measurements used in the design and analysis of transistors.
  • Keywords
    Capacitance; Frequency; Geometry; Germanium; Microwave theory and techniques; Microwave transistors; Noise figure; Power amplifiers; Power transistors; Silicon;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8362
  • Filename
    1450292