Title :
Microwave mixer and detector diodes
Author :
Anand, Yoginder ; Moroney, William J.
Author_Institution :
Microwave Associates, Inc., Burlington, Mass.
Abstract :
Recent advances in microwave mixer and detector diodes are reviewed. Devices considered are germanium back diodes, silicon and gallium arsenide point-contact diodes, and Schottky-barrier diodes. Current work on low-barrier (n-type) Schottky diodes and high-burnout point-contact diodes is also described. Experimental results of CW and RF pulse burnout of these devices are summarized. Different approaches to improve the power-handling capability of Schottky diodes at S-, X-, and Ku-band frequencies are considered.
Keywords :
Acoustical engineering; Capacitance; Detectors; Frequency; Microwave devices; Noise figure; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8363
