Title :
Elimination of Forming Process for TiOx Nonvolatile Memory Devices
Author :
Wang, Wei ; Fujita, Shinobu ; Wong, S. Simon
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fDate :
7/1/2009 12:00:00 AM
Abstract :
This letter studies the physical mechanism for the high-voltage forming process that is required before a TiOx resistance-change memory device can be set and reset repeatedly. A new in situ fabrication process has been developed and demonstrated to eliminate the high-voltage forming.
Keywords :
random-access storage; titanium compounds; TiO; high-voltage forming process; nonvolatile memory devices; physical mechanism; resistance-change memory device; Forming; in situ fabrication; nonvolatile memory (NVM); titanium oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2021003
