Title :
Avalanche region width in various structures of IMPATT diodes
Author :
Schroeder, W.E. ; Haddad, G.I.
Abstract :
The avalanche region of one-sided and two-sided abrupt junctions has been studied. These are the structures most commonly utilized for IMPATT diodes. Numerical results are presented which show that n+-p Si diodes have much narrower avalanche regions, due to the unequal ionization rates in Si, than the complementary p+-n type. The implications of these results with respect to IMPATT diode design are discussed.
Keywords :
Bipolar transistors; Driver circuits; Electric breakdown; Electrons; Equations; Gallium arsenide; Ionization; Resists; Schottky barriers; Schottky diodes;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8372
