• DocumentCode
    918981
  • Title

    High-power microwave amplifier using IMPATT diodes

  • Author

    Bains, A.S.

  • Author_Institution
    Microwave Associates, Luton, UK
  • Volume
    8
  • Issue
    16
  • fYear
    1972
  • Firstpage
    427
  • Lastpage
    428
  • Abstract
    A single multichip IMPATT diode, operating in the unconditional amplifying mode, has been used as a reflection amplifier in the 6¿8 GHz range. C.W. power-output levels of 4.0 W have been achieved with a stable reflection-amplifier circuit, using two multichip diodes in separate cavities coupled to a single circulator through an airstrip hybrid. The gain of the amplifier is 6 dB, with 250 MHz (¿1 dB) bandwidth.
  • Keywords
    IMPATT diodes; microwave amplifiers; power amplifiers; IMPATT diodes; high power microwave amplifier; multichip diodes; reflection amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720309
  • Filename
    4235767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=918981