DocumentCode :
918981
Title :
High-power microwave amplifier using IMPATT diodes
Author :
Bains, A.S.
Author_Institution :
Microwave Associates, Luton, UK
Volume :
8
Issue :
16
fYear :
1972
Firstpage :
427
Lastpage :
428
Abstract :
A single multichip IMPATT diode, operating in the unconditional amplifying mode, has been used as a reflection amplifier in the 6¿8 GHz range. C.W. power-output levels of 4.0 W have been achieved with a stable reflection-amplifier circuit, using two multichip diodes in separate cavities coupled to a single circulator through an airstrip hybrid. The gain of the amplifier is 6 dB, with 250 MHz (¿1 dB) bandwidth.
Keywords :
IMPATT diodes; microwave amplifiers; power amplifiers; IMPATT diodes; high power microwave amplifier; multichip diodes; reflection amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19720309
Filename :
4235767
Link To Document :
بازگشت