Title :
Correction to "Impact-Ionization-Induced Bandwidth-Enhancement of a Si-SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz"
Author :
Shi, J.-W. ; Wu, Y.-S. ; Li, Z.-R. ; Chen, P.S.
Keywords :
Avalanche photodiodes; Frequency response; Indium compounds; Indium gallium arsenide; Materials science and technology; Photoconductivity; Terrorism;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.908373
