Correction to "Impact-Ionization-Induced Bandwidth-Enhancement of a Si-SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz"

Author

Shi, J.-W. ; Wu, Y.-S. ; Li, Z.-R. ; Chen, P.S.

Volume

Issue

fYear

2007

Firstpage

1694

Lastpage

1694

Keywords

Avalanche photodiodes; Frequency response; Indium compounds; Indium gallium arsenide; Materials science and technology; Photoconductivity; Terrorism;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

DOI

10.1109/LPT.2007.908373

Filename

4339519

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