Silicon bipolar laser driving IC for 5 Gb/s and 45-mA modulation current and its application in a demonstrator system

Author

Derksen, Rainer H. ; Wernz, H.

Author_Institution

ANT Nachrichtentech. GmbH, Backnang, Germany

Volume

28

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

824

Lastpage

828

Abstract

The design and implementation of a 5-Gb/s silicon bipolar laser driver IC for direct modulation of a laser diode is reported. The adjustable modulation current range is 15-45 mA. The IC can drive 25-Ω laser modules via a 25-Ω transmission line. Typical power dissipation is 930 mW for a modulation current of 45 mA. Though the IC has been fabricated on a production line instead of using a laboratory technology, it is one of the fastest laser driver ICs ever implemented in silicon. The ability to drive an ohmic load is shown, as well as the performance when driving a real laser module. The circuit has been successfully operated in a demonstrator system for digital optical-fiber transmission

Keywords

bipolar integrated circuits; digital communication systems; driver circuits; elemental semiconductors; laser accessories; optical communication equipment; optical modulation; power integrated circuits; semiconductor lasers; silicon; 15 to 45 mA; 45 mA; 5 Gbit/s; 930 mW; adjustable modulation current range; bipolar laser driving IC; digital optical-fiber transmission; direct modulation; laser diode; laser module; Application specific integrated circuits; Bipolar integrated circuits; Diode lasers; Driver circuits; High speed optical techniques; Optical receivers; Optical transmitters; Pulse amplifiers; Repeaters; Silicon;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.222182

Filename

222182