Title :
Forward and reverse characteristics of self-aligned double-diffused m.o.s. transistors
Author :
McLintock, G.A. ; Thomas, R.E. ; Cobbold, Richard S. C. ; Hogeboom, J.G.
Author_Institution :
Carleton University, Faculty of Engineering, Ottawa, Canada
Abstract :
This letter discusses the properties of, and the fabrication process for, a new etched self-aligned-gate double-diffused m.o.s. transistor. Device characteristics in both the forward and reverse modes of operation are discussed in terms of a simple physical model of internal behaviour.
Keywords :
diffusion; field effect transistors; semiconductor device manufacture; MOST; diffusion; etching; field effect transistors; forward and reverse characteristics; semiconductor devices manufacture;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720334
