Title :
Switching properties of m.n.o.s. memory transistors
Author_Institution :
Honeywell Inc., Solid State Electronics Center, Plymouth, USA
Abstract :
The transient switching behaviour of an m.n.o.s. memory transistor with thin oxide layers (¿25 Å) is studied. The theory takes into account the initial stored charge, the finite nitride current and the voltage dependence of tunnelling probabilities through oxide and nitride. An explicit solution is obtained, which is shown to be in good agreement with the experimental data.
Keywords :
field effect transistors; semiconductor storage devices; metal nitride oxide semiconductor memory transistor; transient switching behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720337
