Title :
Hybrid-orientation technology (HOT): opportunities and challenges
Author :
Yang, Min ; Chan, Victor W.C. ; Chan, Kevin K. ; Shi, Leathen ; Fried, David M. ; Stathis, James H. ; Chou, Anthony I. ; Gusev, Evgeni ; Ott, John A. ; Burns, Lindsay E. ; Fischetti, Massimo V. ; Ieong, Meikei
Author_Institution :
IBM Semicond. R&D Center Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
At the onset of innovative device structures intended to extend the roadmap for silicon CMOS, many techniques have been investigated to improve carrier mobility in silicon MOSFETs. A novel planar silicon CMOS structure, seeking optimized surface orientation, and hence carrier mobilities for both nFETs and pFETs, emerged. Hybrid-orientation technology provides nFETs on (100) surface orientation and pFETs on [110] surface orientation through wafer bonding and silicon selective epitaxy. The fabrication processes and device characteristics are reviewed in this paper.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; silicon; wafer bonding; Si; carrier mobility; hybrid-orientation technology; innovative device structures; nFET; pFET; silicon CMOS structure; silicon MOSFET; silicon selective epitaxy; surface orientation; wafer bonding; CMOS technology; Dielectric materials; Epitaxial growth; Fabrication; High K dielectric materials; Isolation technology; MOSFETs; Silicon; Substrates; Very large scale integration; MOSFET; Mobility; silicon; surface orientation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.872693
