DocumentCode :
919330
Title :
A resonant MOSFET gate driver with efficient energy recovery
Author :
Chen, Yuhui ; Lee, Fred C. ; Amoroso, Luca ; Wu, Ho-Pu
Author_Institution :
Linear Technol. Corp., Milpitas, CA, USA
Volume :
19
Issue :
2
fYear :
2004
fDate :
3/1/2004 12:00:00 AM
Firstpage :
470
Lastpage :
477
Abstract :
High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.
Keywords :
DC-DC power convertors; PWM power convertors; driver circuits; insulated gate bipolar transistors; power MOSFET; resonant power convertors; DC-DC power conversion; IGBT; PWM converters; discharging transitions; efficient energy recovery; high frequency pulse-width modulation; metal oxide semiconductor field effect transistor; resonant MOSFET gate driver; resonant gate drive techniques; Driver circuits; Drives; FETs; Frequency conversion; Frequency modulation; MOSFET circuits; Pulse width modulation; Pulse width modulation converters; RLC circuits; Resonance;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2003.823206
Filename :
1271331
Link To Document :
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