• DocumentCode
    919409
  • Title

    Temperature stabilization of MOS transistor gain

  • Author

    Valkof, S.A.

  • Volume
    59
  • Issue
    9
  • fYear
    1971
  • Firstpage
    1374
  • Lastpage
    1375
  • Abstract
    The temperature influences directly the gain parameter of MOS transistor and indirectly by varying the cascade operating regime. On certain conditions this may give a complete stabilization of gain.
  • Keywords
    Boundary conditions; Calculus; Cutoff frequency; Integral equations; MOSFETs; Maxwell equations; Plasma stability; Stability analysis; Temperature; Waveguide theory;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8432
  • Filename
    1450362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=919409