Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), and Omega-Gate Silicon-on-Insulator (SOI) MOSFETs are potential candidates for achieving the performance targets of the International Roadmap of the Semiconductor Industry Association. In this paper, wideband experimental and three-dimensional simulation analyses have been carried out to compare the analog/RF performance of DG, TG/FinFET, PG, and single-gate (SG) SOI MOSFETs. The characteristics of the multiple-gate devices were analyzed in the dc and ac regimes from subthreshold region to strong inversion and saturation regions. In both regimes, the advantages and limitations of the multiple-gate devices over the SG structure are discussed for channel length scaling well below 100 nm. To the authors´ knowledge, it is the first time that such extensive results and analyses are presented on the potential of these novel devices for high-frequency analog applications.