DocumentCode
919501
Title
Avalanche Noise from Schottky Barrier Diodes in the Frequency Range 75 - 115 GHz (Technical Notes)
Author
Keen, Nigel J. ; Haas, Robert W. ; Zimmerman, Peter
Volume
26
Issue
10
fYear
1978
fDate
10/1/1978 12:00:00 AM
Firstpage
843
Lastpage
844
Abstract
Excess noise has been generated in the 75-115 GHz band, by reverse biasing GaAs Schottky barrier diodes into avalanche breakdown. Diodes with lower epi-layer doping yield lower excess noise, but provide stable avalanche noise, and are less liable to generate excess mixer noise. A sharp reverse bias characteristic appears to be a precondition for a stable avalanche noise output.
Keywords
Acoustical engineering; Avalanche breakdown; Doping; Frequency; Gallium arsenide; Millimeter wave technology; Noise generators; Noise measurement; Schottky barriers; Schottky diodes;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1978.1129497
Filename
1129497
Link To Document