Title :
Avalanche Noise from Schottky Barrier Diodes in the Frequency Range 75 - 115 GHz (Technical Notes)
Author :
Keen, Nigel J. ; Haas, Robert W. ; Zimmerman, Peter
fDate :
10/1/1978 12:00:00 AM
Abstract :
Excess noise has been generated in the 75-115 GHz band, by reverse biasing GaAs Schottky barrier diodes into avalanche breakdown. Diodes with lower epi-layer doping yield lower excess noise, but provide stable avalanche noise, and are less liable to generate excess mixer noise. A sharp reverse bias characteristic appears to be a precondition for a stable avalanche noise output.
Keywords :
Acoustical engineering; Avalanche breakdown; Doping; Frequency; Gallium arsenide; Millimeter wave technology; Noise generators; Noise measurement; Schottky barriers; Schottky diodes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1978.1129497
