• DocumentCode
    919548
  • Title

    Galerkin method for calculating valence-band wavefunctions in quantum-well structures using exact envelope theory

  • Author

    Morrison, Gordon B. ; Woodworth, Sean C. ; Wang, Huiling ; Cassidy, Daniel T.

  • Author_Institution
    Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
  • Volume
    40
  • Issue
    3
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    222
  • Lastpage
    230
  • Abstract
    The ability to calculate accurately the valence-band structure in semiconductors is important in the design of quantum-well (QW) semiconductor devices. The Galerkin method for calculating accurate analytic approximations for multicomponent valence-band wavefunctions is computationally fast and efficient. The Galerkin method is, in fact, an improved version of an earlier Raleigh-Ritz-type variational method. In this paper, we remark that both the variational method and the more recently proposed Galerkin method are formulated such that they imply symmetrized boundary constraints at material interfaces, with the symmetrized nature of the constraints arising from neglecting the ordering of the operators. Burt´s exact envelope-function theory for semiconductor microstructures has been used to demonstrate, however, that the commonly used symmetrized boundary constraints for material interfaces are unphysical. We therefore present a modified version of the Galerkin method that implicitly assumes physically reasonable, exact envelope-function boundary constraints. Simulations show that the modified Galerkin method successfully produces physical, semi-analytic results that are consistent with exact envelope theory.
  • Keywords
    Galerkin method; interface structure; quantum well lasers; semiconductor quantum wells; valence bands; wave functions; Burt exact envelope-function theory; Galerkin method; Raleigh-Ritz-type variational method; accurate analytic approximations; exact envelope theory; material interfaces; multiple-quantum-well lasers; quantum-well semiconductor devices; quantum-well structures; semiconductor lasers; semiconductor microstructures; symmetrized boundary constraints; valence-band modeling; valence-band structure; valence-band wavefunctions; Constraint theory; Laser modes; Laser theory; Laser tuning; Moment methods; Optical design; Quantum well devices; Quantum wells; Semiconductor lasers; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2003.823024
  • Filename
    1271354