Title :
Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage
Author :
Kondo, Masao ; Sugii, Nobuyuki ; Miyamoto, Masafumi ; Hoshino, Yutaka ; Hatori, Makoto ; Hirasawa, Wataru ; Kimura, Yoshinobu ; Kimura, Shin´ichiro ; Kondo, Yasuichi ; Yoshida, Isao
Author_Institution :
Renesas Technol. Corp., Gunma, Japan
fDate :
5/1/2006 12:00:00 AM
Abstract :
Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile and strained-silicon-layer thickness significantly improved transconductance, on resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability.
Keywords :
1/f noise; MOSFET; elemental semiconductors; leakage currents; semiconductor device breakdown; silicon; 1-f noise; Si; high breakdown voltage; high-driving-voltage capability; junction-depth profile; low leakage current; strained-silicon MOSFET; supercritical-thickness strained layer; transconductance improvement; CMOS technology; Cutoff frequency; Germanium silicon alloys; Leakage current; MOSFETs; Radio frequency; Silicon germanium; Temperature; Transconductance; Voltage; Breakdown voltage; SiGe; critical thickness; strained silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.872892
