• DocumentCode
    919667
  • Title

    50 GHz gallium-arsenide IMPATT oscillator

  • Author

    Gibbons, G. ; Purcell, J.J. ; Wickens, P.R. ; Gokgor, H.S.

  • Author_Institution
    Plessey Co., Allen Clark Research Centre, Towcester, UK
  • Volume
    8
  • Issue
    21
  • fYear
    1972
  • Firstpage
    513
  • Lastpage
    514
  • Abstract
    Gallium-arsenide diffused-junction IMPATT diodes have been operated in F band (40¿60 GHz), producing output powers up to 140 mW, with a conversion efficiency greater than 7%.
  • Keywords
    IMPATT diodes; microwave oscillators; F-band; GaAs devices; IMPATT diodes; microwave oscillators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720374
  • Filename
    4235837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=919667