Depletion-mode TFT made of low-temperature poly-Si

Author

Son, Yong Duck ; Yang, Kyung Dong ; Bae, Byung Seong ; Jang, Jin ; Hong, Munpyo ; Kim, Sung Jin

Author_Institution

Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea

Volume

53

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

1260

Lastpage

1262

Abstract

This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm²/V·s, a threshold voltage of 18 V, an on/of current ratio of 10⁶, and a gate voltage swing of 1.1 V/dec.

Keywords

boron; carrier mobility; elemental semiconductors; field effect transistors; semiconductor doping; silicon; thin film transistors; 18 V; B; Si; depletion-mode TFT; field-effect mobility; hole-accumulation layer; low-temperature TFT; low-temperature poly-Si; p-channel TFT; polycrystalline silicon TFT; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Chemical lasers; Chemical vapor deposition; Doping; Glass; Large scale integration; Silicon; Thin film transistors; Threshold voltage; Depletion-mode thin-film transistor (TFT); polycrystalline silicon thin-film transistor (poly-Si TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.872359

Filename

1624710