Title :
Electron trapping in SiO/sub 2/ formed by oxygen implantation
Author :
Hurley, P.K. ; Hall, S. ; Eccleston, W.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
fDate :
5/1/1992 12:00:00 AM
Abstract :
Electron trapping in implanted oxides has been investigated using avalanche electron injection on a silicon/oxide/silicon capacitor structure. Analysis of the capacitance/voltage curves, yields capture cross sections of 8*10/sup -15/ and 1*10/sup -16/ cm/sup 2/. Moreover, the authors show that as the structure is sensitive to surface potential changes at both oxide/silicon interfaces, the technique permits the density and the centroid of the trapped charge to be determined independently.<>
Keywords :
electron traps; insulating thin films; ion implantation; semiconductor-insulator-semiconductor structures; silicon compounds; surface potential; O implantation; Si-SiO/sub 2/; Si/oxide/Si capacitor structure; avalanche electron injection; capacitance/voltage curves; surface potential changes; Body regions; Capacitance; Capacitors; Current density; Electron traps; Oxygen; Pulse measurements; Silicon on insulator technology; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
