DocumentCode
919706
Title
Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide
Author
Monnier, J. ; Stern, M. ; Maffei, Antonio ; Vandorpe, D.
Author_Institution
LETI, Centre d´Ã\x89tudes Nucléaire, Grenoble, France
Volume
8
Issue
21
fYear
1972
Firstpage
517
Lastpage
518
Abstract
An iterative method to simulate the diffusion phenomena in semiconductor technology is presented. With the computer programs described here, it is possible to obtain accurate values of the impurity concentrations in semiconductor devices directly from technological parameters, such as diffusion temperatures and various elementary times in the process.
Keywords
bipolar transistors; computer applications; electronics applications of computers; iterative methods; semiconductor doping; simulation; DIFFSI computer program; Si; diffusion; diffusion equations; electronics applications of computers; electrostatic neutrality; iterative methods; n-p-n transistor; numerical analysis; semiconductor technology; silicon dioxide; thermodynamic equilibrium; transistor fabrication;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720377
Filename
4235840
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