Title :
Numerical analysis of simultaneous diffusion of several impurities in silicon and silicon dioxide
Author :
Monnier, J. ; Stern, M. ; Maffei, Antonio ; Vandorpe, D.
Author_Institution :
LETI, Centre d´Ã\x89tudes Nucléaire, Grenoble, France
Abstract :
An iterative method to simulate the diffusion phenomena in semiconductor technology is presented. With the computer programs described here, it is possible to obtain accurate values of the impurity concentrations in semiconductor devices directly from technological parameters, such as diffusion temperatures and various elementary times in the process.
Keywords :
bipolar transistors; computer applications; electronics applications of computers; iterative methods; semiconductor doping; simulation; DIFFSI computer program; Si; diffusion; diffusion equations; electronics applications of computers; electrostatic neutrality; iterative methods; n-p-n transistor; numerical analysis; semiconductor technology; silicon dioxide; thermodynamic equilibrium; transistor fabrication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720377
