DocumentCode
919727
Title
Cadmium-doped indium-phosphide light-emitting diode
Author
Astles, M.G. ; Williams, E.W.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
8
Issue
21
fYear
1972
Firstpage
520
Lastpage
521
Abstract
Indium-phosphide light-emitting diodes have been prepared by liquid epitaxy with only one run and only one added dopant (cadmium). The diode-power efficiency was 0.07% at 300 K.
Keywords
epitaxial growth; light emitting diodes; semiconductor doping; cadmium doped liquid epitaxy indium phosphide diode; light emitting devices; semiconductor doping;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720379
Filename
4235842
Link To Document