Title :
Cadmium-doped indium-phosphide light-emitting diode
Author :
Astles, M.G. ; Williams, E.W.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Indium-phosphide light-emitting diodes have been prepared by liquid epitaxy with only one run and only one added dopant (cadmium). The diode-power efficiency was 0.07% at 300 K.
Keywords :
epitaxial growth; light emitting diodes; semiconductor doping; cadmium doped liquid epitaxy indium phosphide diode; light emitting devices; semiconductor doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720379
