Electron barrier height change and its influence on EEPROM cells

Author

Sethi, R.B. ; Kim, U.S. ; Johnson, I. ; Cacharelis, P. ; Manley, M.

Author_Institution

National Semiconductor Corp., Santa Clara, CA, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

244

Lastpage

246

Abstract

The effect of floating polysilicon doping on electron injection barrier height and therefore the PROGRAM/ERASE window of an electrically erasable programmable ROM (EEPROM) cell has been studied. The introduction of dopant and the concentration of electrically active sites at the floating-gate polysilicon/tunnel oxide interface influence the electron injection barrier height during cell ERASE operation. The electron injection barrier increases up to 250 meV upon degenerate doping of the floating-gate polysilicon electrode as measured by dark current-voltage characteristics. The application of these observations in this study is in the design and scaling of EEPROM cells.<>

Keywords

EPROM; impurity distribution; integrated memory circuits; semiconductor-insulator boundaries; EEPROM cells; PROGRAM/ERASE window; Si-SiO/sub 2/; dark current-voltage characteristics; doping concentration; electrically erasable programmable ROM; electron injection barrier height; floating polysilicon doping; polysilicon/tunnel oxide interface; scaling; Current measurement; Current-voltage characteristics; Dielectrics; EPROM; Electrons; Nonvolatile memory; Read-write memory; Semiconductor device doping; Semiconductor device measurement; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145041

Filename

145041