• DocumentCode
    919978
  • Title

    Ultra-wideband SiGe low-noise amplifier

  • Author

    Shi, B. ; Chia, Y.W.

  • Author_Institution
    Inst. for Infocomm Res., Singapore
  • Volume
    42
  • Issue
    8
  • fYear
    2006
  • fDate
    4/13/2006 12:00:00 AM
  • Firstpage
    462
  • Lastpage
    463
  • Abstract
    A low-noise amplifier (LNA) for ultra-wideband (UWB) is presented. The LNA, consisting of two gain stages in multiple feedback loops, achieves a flat power gain of a nominal 20 dB and a noise figure of 2.8-4.7 dB over the 3.1-10.6 GHz UWB band. Implemented in a 0.25 μm SiGe BiCMOS process, the amplifier occupies 0.34 mm2 and draws 11 mA from a 2.7 V supply.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; low noise amplifiers; ultra wideband technology; wideband amplifiers; 0.25 micron; 11 mA; 2.7 V; 2.8 to 4.7 dB; 3.1 to 10.6 GHz; BiCMOS process; LNA; SiGe; UWB band; multiple feedback loops; noise figure; ultra-wideband low-noise amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20064413
  • Filename
    1624748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=919978