Title :
Ultra-wideband SiGe low-noise amplifier
Author :
Shi, B. ; Chia, Y.W.
Author_Institution :
Inst. for Infocomm Res., Singapore
fDate :
4/13/2006 12:00:00 AM
Abstract :
A low-noise amplifier (LNA) for ultra-wideband (UWB) is presented. The LNA, consisting of two gain stages in multiple feedback loops, achieves a flat power gain of a nominal 20 dB and a noise figure of 2.8-4.7 dB over the 3.1-10.6 GHz UWB band. Implemented in a 0.25 μm SiGe BiCMOS process, the amplifier occupies 0.34 mm2 and draws 11 mA from a 2.7 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; low noise amplifiers; ultra wideband technology; wideband amplifiers; 0.25 micron; 11 mA; 2.7 V; 2.8 to 4.7 dB; 3.1 to 10.6 GHz; BiCMOS process; LNA; SiGe; UWB band; multiple feedback loops; noise figure; ultra-wideband low-noise amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064413
