DocumentCode :
920012
Title :
A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology
Author :
Kooi, Jacob W. ; Kovács, Attila ; Sumner, Matthew C. ; Chattopadhyay, Goutam ; Ceria, Riley ; Miller, Dave ; Bumble, Bruce ; LeDuc, Henry G. ; Stern, Jeffrey A. ; Phillips, Tom G.
Author_Institution :
California Inst. of Technol., Pasadena
Volume :
55
Issue :
10
fYear :
2007
Firstpage :
2086
Lastpage :
2096
Abstract :
We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver´s corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.
Keywords :
III-V semiconductors; MIMIC; aluminium compounds; microstrip transitions; millimetre wave mixers; millimetre wave receivers; niobium; submillimetre wave integrated circuits; submillimetre wave receivers; superconductor-insulator-superconductor mixers; IF circuit; Nb-AlN-Nb; Nb-AlN-Nb - Interface; SIS technology; bandwidth waveguide; bias injection; double-sideband receiver; frequency 275 GHz to 425 GHz; frequency 3.5 GHz to 8 GHz; leakage current; mixing element; superconducting-insulating- superconducting tunnel junction; temperature 48 K; temperature 55 K; temperature 72 K; thin-film microstrip transition; tunerless waveguide receiver; Bandwidth; Circuit noise; Mixers; Optical losses; Optical noise; Optical receivers; Optical waveguides; Superconducting device noise; Tuners; Waveguide junctions; AlN tunnel barrier; Allan variance; IF match; broadband waveguide transition; dc break; heterodyne receiver; high current density; multiple Andreev reflection (MAR); planar bandpass filter; shot noise; superconducting-insulator-superconducting (SIS) mixer; system stability;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2007.905503
Filename :
4339616
Link To Document :
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