DocumentCode
920063
Title
Design Theory for Broad-Band YIG-Tuned FET Oscillators
Author
Trew, Robert J.
Volume
27
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
8
Lastpage
14
Abstract
Design techniques that have been succcessfully used on the development of X-band GaAs FET YIG-tuned oscillators are presented. The design procedure results in the maximization of the oscillator bandwidth. Small-signal device characterization is utilized and accurately predicts the oscillator bandwidths. Spurious oscillation conditions are discussed, and design techniques are prescribed for eliminating spurious oscillations in both the active circuit and resonator. The operation of an experimental oscillator verifies the design procedure.
Keywords
Active circuits; Bandwidth; Coupling circuits; Gallium arsenide; Microwave FETs; Microwave devices; Microwave oscillators; Microwave theory and techniques; Power transistors; Solid state circuits;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1979.1129550
Filename
1129550
Link To Document