InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base

Author

Gee, Russell C. ; Chin, Tsung-Pei ; Tu, Charles W. ; Asbeck, Peter M. ; Lin, C.L. ; Kirchner, Peter D. ; Woodall, Jerry M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., La Jolla, CA, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

247

Lastpage

249

Abstract

The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBTs) with p-type carbon doping in InGaAs are reported. P-type carbon doping in the InGaAs base has been achieved by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl/sub 4/) as the dopant source. The resulting hole concentration in the base was 1*10/sup 19/ cm/sup -3/. HBTs fabricated using material from this growth method display good I-V characteristics with DC current gain above 500. This verifies the ability to use carbon doping to make a heavily p-type InGaAs base of an N-p-n HBT.<>

Keywords

III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; C doped base; CCl/sub 4/; DC current gain; GSMBE; HBTs; I-V characteristics; InP-InGaAs:C; gas-source molecular beam epitaxy; growth method; heterojunction bipolar transistors; hole concentration; n-p-n device; p-type C doping; Carbon; Doping; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Organic materials; Radiofrequency interference;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145042

Filename

145042