• DocumentCode
    920083
  • Title

    Analysis and Design of an X-Band Actively Compensated IMPATT Diode Amplifier

  • Author

    Bains, Amarjit S. ; Aitchison, Colin S.

  • Volume
    27
  • Issue
    1
  • fYear
    1979
  • fDate
    1/1/1979 12:00:00 AM
  • Firstpage
    17
  • Lastpage
    23
  • Abstract
    This paper shows how broad-banding of an IMPATT diode amplifier can be achieved using a circuit technique known as active reactance compensation. Theoretical analysis and experimental results both show that the gain-bandwidth products of an uncompensated IMPATT amplifier improves from G12/B = k to G14/B = 2k (where k is a constant) for the same amplifier actively compensated. The measured 3-dB bandwidth of 230 MHz for a 9.0-GHZ amplifier having a gain of 10 dB is improved to 700 MHz at the same gain.
  • Keywords
    Admittance; Bandwidth; Diodes; Frequency; Microwave amplifiers; Neodymium; Preamplifiers; RLC circuits; Radiofrequency amplifiers; Shunt (electrical);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1979.1129552
  • Filename
    1129552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920083