DocumentCode :
920154
Title :
Behaviour of electrical and optical properties of indium tin oxide transparent electrode after CMP process
Author :
Choi, G.-W. ; Kim, N.-H. ; Seo, Y.-J. ; Lee, W.-S.
Author_Institution :
Dept. of Electr. Eng., Chosun Univ., Gwangju, South Korea
Volume :
42
Issue :
8
fYear :
2006
fDate :
4/13/2006 12:00:00 AM
Firstpage :
487
Lastpage :
489
Abstract :
Indium tin oxide (ITO) thin film was prepared by a chemical mechanical polishing (CMP) process for good surface morphology. The optical transmittance of ITO thin film was improved after the CMP process as a result of the optimised process parameters compared to that of as-deposited thin film before the CMP process.
Keywords :
chemical mechanical polishing; indium compounds; semiconductor thin films; surface morphology; tin compounds; ITO; ITO thin film; InSnO; chemical mechanical polishing; electrical properties; indium tin oxide transparent electrode; optical properties; optical transmittance; surface morphology;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060156
Filename :
1624764
Link To Document :
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