Title :
Band-to-band auger recombination and carrier-carrier scattering in power rectifiers
Author_Institution :
Royal Institute of Technology, Physics Department III, Stockholm, Sweden
Abstract :
It is shown that band-to-band Auger recombination has a profound influence on the carrier-concentration profile and on the forward characteristic of p-s-n rectifiers (and thyristors) at high current densities, particularly when the diffusivity is decreased at high carrier concentrations by carrier-carrier scattering.
Keywords :
Auger effect; carrier density; electron-hole recombination; solid-state rectifiers; thyristors; Auger effect; carrier concentration profile; carrier density; electron hole recombination; forward characteristic; power rectifiers; solid state rectifiers; thyristors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720421
