• DocumentCode
    920190
  • Title

    Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs

  • Author

    Endoh, A. ; Yamashita, Y. ; Hikosaka, K. ; Matsui, T. ; Hiyamizu, S. ; Mimura, T.

  • Author_Institution
    Fujitsu Labs. Ltd, Atsugi Kanagawa, Japan
  • Volume
    42
  • Issue
    8
  • fYear
    2006
  • fDate
    4/13/2006 12:00:00 AM
  • Firstpage
    490
  • Lastpage
    492
  • Abstract
    Decananometre-T-shaped-Ni/Pt/Au-gate AlGaN/GaN HEMTs on sapphire substrates are fabricated and their DC characteristics measured. The negative shifts of threshold voltages occur below 5-6 of channel aspect ratio Lg/d, where Lg is the gate length and d is the AlGaN barrier layer thickness. This is a similar trend as observed in AlGaAs/GaAs HEMTs. The negative threshold voltage shifts are enhanced with increasing d, which results from the increase of the two-dimensional electron gas thickness.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; gold; high electron mobility transistors; nickel; platinum; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas thickness; AlGaAs-GaAs; AlGaN-GaN-Al2O3; Ni-Pt-Au; T-shaped Ni/Pt/Au-gate; decananometre-gate HEMT; high electron mobility transistor; sapphire substrate; threshold voltage shifts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060513
  • Filename
    1624766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920190