DocumentCode :
920190
Title :
Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs
Author :
Endoh, A. ; Yamashita, Y. ; Hikosaka, K. ; Matsui, T. ; Hiyamizu, S. ; Mimura, T.
Author_Institution :
Fujitsu Labs. Ltd, Atsugi Kanagawa, Japan
Volume :
42
Issue :
8
fYear :
2006
fDate :
4/13/2006 12:00:00 AM
Firstpage :
490
Lastpage :
492
Abstract :
Decananometre-T-shaped-Ni/Pt/Au-gate AlGaN/GaN HEMTs on sapphire substrates are fabricated and their DC characteristics measured. The negative shifts of threshold voltages occur below 5-6 of channel aspect ratio Lg/d, where Lg is the gate length and d is the AlGaN barrier layer thickness. This is a similar trend as observed in AlGaAs/GaAs HEMTs. The negative threshold voltage shifts are enhanced with increasing d, which results from the increase of the two-dimensional electron gas thickness.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; gold; high electron mobility transistors; nickel; platinum; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas thickness; AlGaAs-GaAs; AlGaN-GaN-Al2O3; Ni-Pt-Au; T-shaped Ni/Pt/Au-gate; decananometre-gate HEMT; high electron mobility transistor; sapphire substrate; threshold voltage shifts;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060513
Filename :
1624766
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=920190
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