Computer simulated model of thermomagnetic writing

Author

Weng, R.S. ; Wu, Jinn-Chang ; Cendes, Z.J. ; Kryder, M.H.

Author_Institution

Magnetic Technol. Center, Carnegie-Mellon Univ., Pittsburgh, PA

Volume

25

Issue

5

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

3536

Lastpage

3538

Abstract

A computer-simulation model that is based on the concept of domain wall motion has been developed to describe the thermomagnetic writing processes in rare-earth-transition-metal thin films. The equation of motion is derived from the Landau-Lifshitz-Gilbert equation. The model is different from other proposed models in the following respects: the transient diameter of the written domain is directly calculated; domain wall mobility, which is measured whenever possible, is used explicitly; and written domains of arbitrary shape can be simulated. The validity of this model was tested by comparing simulated results for GdTbCo films with experimental data taken by high-speed photography of thermomagnetically written domains. The simulation provides a good match to the experimentally observed domain growth rate

Keywords

cobalt alloys; digital simulation; gadolinium alloys; magnetic domain walls; magneto-optical recording; terbium alloys; thermomagnetic recording; GdTbCo films; Landau-Lifshitz-Gilbert equation; computer-simulation model; domain growth rate; domain wall mobility; domain wall motion; erasable optical memory device; high-speed photography; magneto-optical layer; rare-earth-transition-metal thin films; thermomagnetic writing processes; transient diameter; Computational modeling; Computer simulation; Equations; Photography; Shape measurement; Testing; Transistors; Writing;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.42359

Filename

42359