Title :
Method of calculating high-frequency parameters of m.o.s. transistors in the nonpinchoff region
Author_Institution :
CNRS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Abstract :
A new method of calculating high-frequency admittance parameters of m.o.s. transistors is proposed. Approximate analytical expressions are obtained which are in good agreement, at very high frequencies, with the exact computed solutions. The domain of validity of the frequency and bias conditions of the yij relations is given.
Keywords :
admittance; field effect transistors; MOST; admittance; high frequency parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720445
