Title :
Measurements of the influence of the nd product on the Gunn effect
Author :
Schlachetzki, Andreas ; Mause, Klaus
Author_Institution :
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Abstract :
Measurements of the effect of the nd product on domain formation in planar Gunn devices on GaAs are reported. Starting at nd = 1012 cm¿2, the Gunn effect decreases to zero at nd = 1011 cm¿2.
Keywords :
Gunn devices; electric current measurement; gallium arsenide; Electric current measurement; GaAs; Gunn devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720463
