Experimental gain parameters of three microwave-bipolar transistors in the 2- to 8-GHz range

In order to design transistorized amplifiers in the microwave range the knowledge of the four gain parameters as a function of the bias condition is essential. Since the scattering parameters are most easily measurable at high frequencies, the gain parameters of three different microwave transistors, which are now available on the market, have been calculated by computer from their measured scattering parameters.