Title :
Strain-induced performance improvements in long-wavelength, multiple-quantum-well, ridge-waveguide lasers with all quaternary active regions
Author :
Evans, J.D. ; Makino, T. ; Puetz, N. ; Simmons, J.G. ; Thompson, D.A.
fDate :
4/1/1992 12:00:00 AM
Abstract :
A comparison between the performance of strained (1.5% compression) and unstrained multiple-quantum-well (MQW), ridge-waveguide lasers with identical geometrical structures and similar emission wavelengths is reported. Results show that significant improvements in the characteristic temperature (T/sub 0/), maximum output power, maximum operating temperature, and internal quantum efficiency can be obtained through the applications of strain. Accordingly, for lasers employing strained active regions, an improved characteristic temperature, T/sub 0/, of 85 K and high-maximum lasing temperature of 140 degrees C were obtained under pulsed operating conditions. These values are the highest ever observed for long-wavelength lasers with all-quaternary strained MQW active regions.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical waveguides; semiconductor junction lasers; 140 degC; 85 K; InGaAsP; MQW; all quaternary active regions; characteristic temperature; emission wavelengths; high-maximum lasing temperature; internal quantum efficiency; long-wavelength; maximum operating temperature; maximum output power; multiple-quantum-well; ridge-waveguide lasers; semiconductors; strain-induced laser performance improvements; strained active regions; Capacitive sensors; Laser theory; Lattices; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
