Title :
Small-signal noise analysis of p+--n--p+ BARITT diodes
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
The noise sources in BARITT diodes are described. The noise measure is calculated numerically and compared with experimental results. The optimum noise measure at 8 GHz was determined by varying the device width for given current density and doping density. The best noise measure of 9 dB was obtained for a doping of 2.5 x 1015/cm3 and a current density of 60 A/cm2.
Keywords :
noise; solid-state microwave devices; transit time devices; 8 GHz; BARITT diodes; noise; p-n-p junction; small signal analysis; solid state microwave devices; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730002
