Title :
Diffusion of hot electrons in n indium phosphide
Author :
Hammar, C. ; Vinter, B.
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
The diffusion-conefficient/field characteristic has been calculated for n indium phosphide. The resulting curves show several pearks and minima. The origin of these features is discussed.
Keywords :
III-V semiconductors; electron mobility; indium compounds; diffusion; diffusion coefficient/field characteristics; electron mobility; hot electrons; n indium phosphide; types III-IV semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730007
