Title :
Noise performance of gallium-arsenide and indium-phosphide injection-limited diodes
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
Noise factors of gallium-arsenide and indium-phosphide injection-limited diodes have been calculated. The results show that it is generally preferable to bias the diodes to fields higher than the maximum-negative-mobility region if the appropriate boundary condition at the cathode can be maintained.
Keywords :
noise; semiconductor diodes; boundary condition; diffusion coefficients; gallium arsenide; noise; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730008
