• DocumentCode
    920762
  • Title

    Electrically alterable avalanche-injection memory

  • Author

    Card, H.C. ; Worrall, A.G.

  • Author_Institution
    University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
  • Volume
    9
  • Issue
    1
  • fYear
    1973
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    In a 2-layer (SiO2¿Si3 N4) dielectric structure, avalanche-injected electrons are collected by a floating gate. It is shown that this charge can be removed from the floating gate by conduction through the Si3N4 layer.
  • Keywords
    electron avalanches; semiconductor storage devices; SiO2-Si3N4 dielectric structure; avalanche injection memory; electron avalanches; floating gate; semiconductor storage devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730010
  • Filename
    4235944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920762