DocumentCode :
920815
Title :
Statistical approach to the prediction of m.o.s.-device performance
Author :
Hagan, B.J. ; Magowan, J.A.
Author_Institution :
Queen´´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Volume :
9
Issue :
2
fYear :
1973
Firstpage :
23
Lastpage :
24
Abstract :
A method of statistical analysis is presented for the obtaining of the probability-density function of a performance parameter defined as a function of control parameters with known probability-density functions. Included is an example of the technique applied to the input-voltage/output-voltage relationship of an m.o.s. integrated invertor. The method has the advantage of being significantly faster than a comparable Monte Carlo simulation.
Keywords :
invertors; metal-insulator-semiconductor devices; statistical analysis; IC; MOS; invertors; metal insulator semiconductor devices; performance; statistical analysis;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730016
Filename :
4235951
Link To Document :
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