Title :
Low-drive voltage intersectional waveguide optical switch using GaInAs/InP MQW structure
Author :
Shimomura, Kazuhiko ; Aizawa, Takuya ; Tanaka, Narutomo ; Arai, Shigehisa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A low-drive voltage intersectional waveguide optical switch using 1.6 mu m GaInAs/InP MQW (multiple quantum well) structure, which was fabricated by only one-step epitaxial growth of MQW structure followed by a one-step pattern etching of the waveguide is demonstrated. Extinction ratio at the straight port of 9.9 dB and that at the reflection port of 4.4 dB were obtained at an applied voltage of -4 V.<>
Keywords :
III-V semiconductors; electro-optical devices; etching; gallium arsenide; indium compounds; integrated optics; optical switches; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor switches; vapour phase epitaxial growth; -4 V; 1.6 micron; GaInAs-InP; IR; MQW structure; applied voltage; extinction ratio; low-drive voltage intersectional waveguide optical switch; multiple quantum well; one-step epitaxial growth; one-step pattern etching; reflection port; semiconductors; straight port; Epitaxial growth; Erbium-doped fiber amplifier; Indium phosphide; Optical losses; Optical reflection; Optical switches; Optical waveguides; Quantum well devices; Refractive index; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
