DocumentCode
920919
Title
GaAs Power MESFET´s: Design, Fabrication, and Performance
Author
Dilorenzo, J.V. ; Wisseman, William R.
Volume
27
Issue
5
fYear
1979
fDate
5/1/1979 12:00:00 AM
Firstpage
367
Lastpage
378
Abstract
This paper reviews the state of the art of power GaAs MESFET´s. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as important to power by workers in the field the performance of the device in terms of frequency effects, power per unit gate-width effects, scaling from small to large gate-width devices, and voltage effects. In addition, the circuit applications of GaAs FET´s will be briefly discussed.
Keywords
Circuit noise; Equivalent circuits; Fabrication; Frequency; Gallium arsenide; Instruments; MESFETs; Microwave FETs; Microwave devices; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1979.1129635
Filename
1129635
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