• DocumentCode
    920919
  • Title

    GaAs Power MESFET´s: Design, Fabrication, and Performance

  • Author

    Dilorenzo, J.V. ; Wisseman, William R.

  • Volume
    27
  • Issue
    5
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    367
  • Lastpage
    378
  • Abstract
    This paper reviews the state of the art of power GaAs MESFET´s. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as important to power by workers in the field the performance of the device in terms of frequency effects, power per unit gate-width effects, scaling from small to large gate-width devices, and voltage effects. In addition, the circuit applications of GaAs FET´s will be briefly discussed.
  • Keywords
    Circuit noise; Equivalent circuits; Fabrication; Frequency; Gallium arsenide; Instruments; MESFETs; Microwave FETs; Microwave devices; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1979.1129635
  • Filename
    1129635