Title :
DC and AC characteristics of AL/sub 0.25/Ga/sub 0.75/As/GaAs quantum-well delta-doped channel FET grown by LP-MOCVD
Author :
Jeong, Dong-Ho ; Jang, Kyeong-Sik ; Lee, Jeong-Soo ; Jeong, Yoon-Ha ; Kim, Bumman
Author_Institution :
Dept. of Electron. & Electr., Pohang Inst. of Sci. & Technol., South Korea
fDate :
5/1/1992 12:00:00 AM
Abstract :
Al/sub 0.25/Ga/sub 0.75/As/GaAs quantum well delta-doped channel FETs (QWDFETs) have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The FETs with a gate dimension of 1.8 mu m*100 mu m had a maximum extrinsic transconductance of 190 mS/mm and a maximum current density of 425 mA/mm. The device showed extremely broad transconductances around its peak. The S-parameter measurements indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. The transconductance versus gate voltage profiles showed a plateau region through a range of 1.7 V supporting spatial confinement of the electrons. These values are among the best reported for delta-doped GaAs-based FETs with a similar device geometry.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; field effect transistors; gallium arsenide; semiconductor growth; semiconductor quantum wells; solid-state microwave devices; vapour phase epitaxial growth; 15 GHz; 190 mS; AC characteristics; Al/sub 0.25/Ga/sub 0.75/As-GaAs; LP-MOCVD; S-parameter measurements; current density; current gain; drain I-V characteristics; extrinsic transconductance; low-pressure metalorganic chemical vapor deposition; power gain cutoff frequencies; quantum-well delta-doped channel FET; spatial electron confinement; transconductance versus gate voltage profiles; Chemical vapor deposition; Current density; Current measurement; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Power measurement; Scattering parameters; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
