DocumentCode :
920998
Title :
Charge-coupled devices with submicron electrode separations
Author :
Baker, I.M. ; Beynon, J.D.E. ; Copeland, M.A.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Volume :
9
Issue :
3
fYear :
1973
Firstpage :
48
Lastpage :
49
Abstract :
A technique is described for fabricating a 2-phase charge-coupled structure in which the electrodes are separated by only 0.1¿0.3 ¿m. Stringent photolithographic processing is not required for producing the submicron gaps.
Keywords :
field effect devices; semiconductor device manufacture; FET; photolithographic processing; semiconductor device manufacture; submicron electrode separations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730034
Filename :
4235970
Link To Document :
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