DocumentCode :
921007
Title :
Silicon Bipolar Microwave Power Transistors
Author :
Allison, Richard
Volume :
27
Issue :
5
fYear :
1979
fDate :
5/1/1979 12:00:00 AM
Firstpage :
415
Lastpage :
422
Abstract :
This paper presents a review of the present states of commercially available silicon bipolar transistors and projects what power at frequency performance will be available in the next few years. It discusses the need for implementing certain fabrication/processing developments necessary to meet the projected power at frequency performance Ievels.
Keywords :
Bipolar transistors; Electrons; FETs; Fabrication; Frequency; Gallium arsenide; MESFETs; Power transistors; Silicon; Thermal resistance;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129642
Filename :
1129642
Link To Document :
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