• DocumentCode
    921007
  • Title

    Silicon Bipolar Microwave Power Transistors

  • Author

    Allison, Richard

  • Volume
    27
  • Issue
    5
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    415
  • Lastpage
    422
  • Abstract
    This paper presents a review of the present states of commercially available silicon bipolar transistors and projects what power at frequency performance will be available in the next few years. It discusses the need for implementing certain fabrication/processing developments necessary to meet the projected power at frequency performance Ievels.
  • Keywords
    Bipolar transistors; Electrons; FETs; Fabrication; Frequency; Gallium arsenide; MESFETs; Power transistors; Silicon; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1979.1129642
  • Filename
    1129642